apl. Prof. Dr. Martin Hundhausen

Lehrstuhl für Laserphysik (Prof. Dr. Hommelhoff)

Publications

2013

  • Fromm, Felix; Oliverira, M.H. Jr.; Molina-Sánchez, A.; Hundhausen, Martin; Lopes, J.M.J.; Riechert, H.; Wirtz, L.; Seyller, Th.;
    Contribution of the buffer layer to Raman spectrum of epitaxial graphene on SiC(0001)
    n/a n/a, n/a (2013).

2012

  • Ostler, Markus; Koch, R.J.; Speck, Florian; Fromm, Felix; Vita, H.; Hundhausen, Martin; Horn, K.; Seyller, Th.;
    Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation
    Mat. Sci. Forum 717-720, 649 (2012).

2011

  • Speck, Florians; Jobst, J.; Fromm, Felix; Ostler, Markus; Waldmann, D.; Hundhausen, Martin; Weber, H.B.; Seyller, Th.;
    The quasi-free-standing nature of graphene on H-saturated SiC(0001)
    Appl. Phys. Lett. 9, 12206 (2011).

2010

  • Speck, Florian; Ostler, Markus; Röhrl, J.; Emtsev, K.V.; Hundhausen, Martin; Ley, Lothar; Seyller, Th.;
    Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
    Phys. Stat. Sol. C 7, 398 (2010).
  • Röhrl, J.; Hundhausen, Martin; Speck, Florian; Seyller, Th.;
    Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy
    Mat. Sci. Forum 645-648, 603 (2010).

2009

  • Englert, J.M.; Röhrl, J.; Schmidt, C.D.; Graupner, Ralf; Hundhausen, Martin; Hauke, Frank; Hirsch, A.;
    Soluble Graphene: Generation of Aqueous Graphene Solutions Aided by a Perylenebisimide-Based Bolaamphiphile
    Adv. Mater. 21, 4265 (2009).

2008

  • Hundhausen, Martin; Püsche, R.; Röhrl, J.; Ley, Lothar;
    Characterization of defects in silicon carbide by Raman spectroscopy
    Phys. Stat. Sol. (b) 254, 1356 (2008).
  • Syrgiannis, Z.; Hauke, Frank; Röhrl, J.; Hundhausen, Martin; Graupner, Ralf; Elemes, Y.; Hirsch, A.;
    Covalent Sidewall Functionalization of SWNTs by Nucleophilic Addition of Lithium Amides
    Eur. J. Org. Chem. n/a, 2544 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Ley, Lothar;
    Graphene layers on silicon carbide studied by Raman spectroscopy
    Mat. Sci. Forum 600-603, 567 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Graupner, Ralf; Ley, Lothar;
    Raman spectra of epitaxial graphene on SiC(0001)
    Appl. Phys. Lett. 92, 201918 (2008).

2007

  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of cubic SiC single crystals by the physical vapor transport technique
    Journ. Cryst. Growth 308, 241 (2007).

2006

  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Pensl, Gerhard; Desperrier, P.; Wellmann, P.; Haller, E.; Ager, J.; Starke, Ulrich;
    Electronic Raman studies of shallow donors in Silicon Carbide
    Mat. Sci. Forum 527-529, 579 (2006).
  • Graupner, Ralf; Abraham, J.; Vencelov, A.; Lauffer, P.; Röhrl, J.; Hundhausen, Martin; Ley, Lothar; Hirsch, A.;
    Nucleophilic-Alkylation-Reoxidation: A Functionalization Sequence for Single- Wall Carbon Nanotubes
    J. Am. Chem. Soc. 128, 6683 (2006).

2005

  • Wellmann, P.J.; Herro, Z; Winnacker, Albrecht; Pücshe, R.; Hundhausen, Martin; Masri, P.; Kulik, A.; Bogdanov, M.; Karpov, S.; Ramm, M.; Makarov, Y.;
    In situ visualization of SiC physical vapor transport crystal growth
    Journ. Cryst. Growth 275, e1807 (2005).

2004

  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of 3C-SiC bulk material by the modified Lely method
    Mat. Sci. Forum 457-460, 151 (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy
    Mat. Sci. Forum 457-460, 617 (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
    J. Appl. Phys. 96, 5569 (2004).

2003

  • Steeds, J.W.; Evans, G.A.; Furkert, S.; Ley, Lothar; Hundhausen, Martin; Schulze, N; Pensl, Gerhard;
    Identification of dumb-bell shaped interstitials in electron irradiated 6H-SiC by photoluminescence spectroscopy
    Mat. Sci. Forum 433-436, 305 (2003).
  • Wellmann, P.J.; Herro, Z; Selder, M.; Durst; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Winnacker, Albrecht;
    Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling
    Mat. Sci. Forum 433-436, 9 (2003).
  • Herro, Z.; Wellmann, P.J.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Maier, M.; Masri, P.; Winnacker, Albrecht;
    Investigation of mass transport during PVT growth of SiC by 13C labelling of source material
    Journ. Cryst. Growth 258, 261 (2003).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar;
    Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
    Mat. Sci. Forum 433-436, 325 (2003).

2002

  • B. Herzog; S. Rohmfeld; Püsche, Roland; Hundhausen, Martin; Ley, Lothar; Semmelroth, Kurt; Pensl, Gerhard;
    Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
    Material Science Forum 389-393, 625 (2002).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; C. A. Zorman; M. Mehregany;
    Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy
    Journal of Applied Physics 91, 1113 (2002).

2001

  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; N. Schulze; Pensl, Gerhard;
    Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC
    Physical Review Letters 86, 826 (2001).
  • Stark, Tanja; L. Gutowski; M. Herden; H. Grunleitner; S. Kohler; Hundhausen, Martin; Ley, Lothar;
    Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry
    Microelectronic Engineering 55, 101 (2001).

2000

  • Stark, Tanja; H. Grünleitner; Hundhausen, Martin; Ley, Lothar;
    Deriving the Kinetic Parameters for Pt-Silicide Formation from Temperature Ramped in Situ Ellipsometric Measurements
    Thin Solid Films 358, 73 (2000).
  • Püsche, Roland; S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC
    Material Science Forum 338-342, 583 (2000).

1999

  • Zhou, Shi-Ming; Hundhausen, Martin; Stark, Tanja; Chen, L.Y.; Ley, Lothar;
    Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
    J. Vac. Sci. Technol. A 17, 144 (1999).
  • Ley, Lothar; Stark, Tanja; Hundhausen, Martin; Gruenleitner, Holger;
    Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors
    Symposium. Materials Research Society , 145 San Francisco, (1999).

1998

  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Raman scttering in polycrystalline 3C-SiC: influence of stacking faults
    Physical Review B 58, 9858 (1998).

1997

  • Poczik, I.; Koos, M.; Moustafa, S.M.; Andar, J.A.; Berkesi, O.; Hundhausen, Martin;
    Comparative Raman studies of amorphous carbon films using infra red and visible excitation
    Mikrochim. Acta 14, 755 (1997).

1996

  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. and Rel. Mat. 5, 321 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
    J. Appl. Phys. 76, 768 (1996).
  • Hundhausen, Martin; Nagy, A.; Ley, Lothar;
    High field transport in the inversion layer of amorphous silicon thin film transistors
    J. Non-Cryst. Sol. 198-200, 230 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Influence of space charges on the resonant photoconductor employing a moving laser inducde grating
    Appl. Phys. Lett. 69, 1746 (1996).
  • Ley, Lothar; Teuschler, Ralf; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin;
    Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope
    J. Vac. Sci. Technol. B 14, 2845 (1996).
  • Teuschler, Thomas; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope
    J. Vac. Sci. Technol. B 14, 1268 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Resonant photoconductor structures for the generation of microwave currents: Importance of space charges
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3319 Berlin Berlin, (1996).
  • Strauß, Johannes; Hundhausen, Martin; Ley, Lothar;
    Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3223 Berlin Berlin, (1996).
  • Hundhausen, Martin;
    The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors
    J. Non-Cryst. Sol. 198-200, 146 (1996).

1995

  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors
    Phys. Rev. B 51, 10579 (1995).
  • Hundhausen, Martin; Ley, Lothar;
    Bipolar treatment of the electrically detected transient grating technique
    Appl. Phys. Lett. 67, 2518 (1995).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. Rel. Mat. 5, 321 (1995).
  • Weigelt, G.; Hundhausen, Martin; Ley, Lothar;
    Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e
    Solid State Phenomena 44-46, 495 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscopy
    Appl. Phys. Lett. 66, 2499 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics
    Appl. Phys. Lett. 67, 3144 (1995).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin
    Phys. Rev. B 52, 11289 (1995).

1994

  • Teuschler, Thomas; Hundhausen, Martin; Eckstein, Ralf; Ley, Lothar;
    Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air
    J. Vac. Sci. Technol. B 12, 2440 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices
    Superlattices and Microstructures 16, 271 (1994).
  • Witt, C.; Haken, U.; Hundhausen, Martin;
    Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique
    Jap. J. Appl. Phys. 33, L1809 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures
    J. Appl. Phys. 75, 2690 (1994).
  • Hundhausen, Martin; Haken, U.; Ley, Lothar;
    Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors
    Mat. Res. Soc. Symp. Proc. 336, 353 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diamond and Related Materials 3, 891 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diam. Rel. Mat. 3, 891 (1994).

1993

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Arce, R.;
    Analysis of Random telegraph noise in large-area amorphous double-barrier structures
    Phys. Rev. B 47, 12687 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique
    J. of Non Cryst. Solids 164-166, 497 (1993).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Field enhanced conductivity in a-Si:H thin film transistors
    J. Non-Cryst. Solids 164-166, 529 (1993).
  • Xu, S.; Hundhausen, Martin; Ristein, Jürgen; Yan. B.; Ley, Lothar;
    Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
    J. Non-Cryst. Solids 164-166, 1127 (1993).
  • Stöckel, R.; Graupner, Ralf; Janischowsky, Klemens; Xu, S.; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Initial stages in the growth of polycrystalline diamond on silicon
    Diamonds and Related Materials 2, 1467 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime
    Appl. Phys. Lett. 63, 3066 (1993).

1991

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
    J. of Non Cryst. Solids 137&138, 1107 (1991).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Structure of interfaces in a-Si:H/a-SiNx:H superlattices
    J. Appl. Phys. 69, 778 (1991).
  • Hundhausen, Martin; Ley, Lothar;
    The formation and stability of sub-micron clusters in silane and argon plasmas
    J. of Non Cryst. Solids 137&138, 795 (1991).

1989

  • Arce, R.; Ley, Lothar; Hundhausen, Martin;
    Random telegraphic noise in large area a-Si:H/a:Si1􀀀xNx double barrier structures
    J. of Non Cryst. Solids 114, 471 (1989).
  • Hundhausen, Martin;
    Thermally stimulated Conductivity in a-Si:H Doping superlattices
    J. of Non Cryst. Solids 114, 720 (1989).

1988

  • Hundhausen, Martin; Ichiguchi, T.; Shiraki, Y.;
    Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface
    Appl. Phys. Lett. 53, 110 (1988).

1987

  • Ley, Lothar; Hundhausen, Martin;
    Carrier recombination kinetics in amorphous doping superlattices
    Disordered semiconductors , n/a New York & London (1987).
  • Ichiguchi, T.; Hundhausen, Martin; Shiraki, Y.;
    Multiple quantum wires in GaAs/GaAlAs
    Extended abstracts of the 48th Autum meeting of the Jap. Soc. of Appl. Phys. n/a, n/a (1987).

1986

1985

  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Experimental evidence for Phonon folding in compositional amorphous Superlattices
    J. of Non Cryst. Solids 77&78, 1069 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
    Phys. Rev. B 32, 6655 (1985).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Observation of folded-zone acoustical phonons by Raman scattering
    Phys. Rev. B 33, 1516 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices
    J. of Non Cryst. Solids 77&78, 1051 (1985).

1984

  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination in Doping-Superlattices of a-Si:H
    Proc. 17th Int. Conf. on the Physics of Semiconductors , 495 San Francisco San Francisco, (1984).
  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
    Phys. Rev. Lett. 53, 1598 (1984).

1983

  • Hundhausen, Martin;
    Defect States in a-Si:Nx:H
    J. of Non Cryst. Solids 59&60, 601 (1983).