Prof. Dr. Lothar Ley

Lehrstuhl für Laserphysik (Prof. Dr. Hommelhoff)


    Phone: 09131/24191

Publications

2013

  • Ley, Lothar; Smets, Yaou; Pakes, Christopher I.; Ristein, Jürgen;
    Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides
    Advanced Functional Materials 23, 794 (2013).
  • Rietwyk, K.J.; Smets, Yaou; Bashouti, Muhammad Y.; Christiansen, Silke H.; Tadich, A.; Edmonds, M.T.; Ristein, Jürgen; Ley, Lothar; Pakes, Chritopher I.;
    Charge transfer doping of Silicon
    Phys. Rev. Lett. n/a, n/a (2013).
  • O'Donnel, K.M.; Edmonds, M.T.; Ristein, Jürgen; Tadich, A.; Thomsen, L.; Wu, Qihui; Pakes, Christopher I.; Ley, Lothar;
    Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement
    Adv. Funct. Mat. 23, 5608-5614 (2013).

2012

2011

  • Edmonds, M.T.; Pakes, Christopher I.; Mammadov, S.; Zhang, Wenying; Tadich, A.; Ristein, Jürgen; Ley, Lothar;
    Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
    Appl. Phys. Lett. 88, 102101 (2011).

2010

  • Speck, Florian; Ostler, Markus; Röhrl, J.; Emtsev, K.V.; Hundhausen, Martin; Ley, Lothar; Seyller, Th.;
    Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM
    Phys. Stat. Sol. C 7, 398 (2010).
  • Ristein, Jürgen; Yhang, Wenying; Speck, Florian; Ostler, Markus; Ley, Lothar; Seyller, Thomas;
    Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
    J. Phys. D: App. Phys. 43, 345303 (2010).
  • Strobel, Paul; Ristein, Jürgen; Ley, Lothar;
    Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films
    J. Phys. Chem. C 114, 4317 (2010).

2008

  • Hundhausen, Martin; Püsche, R.; Röhrl, J.; Ley, Lothar;
    Characterization of defects in silicon carbide by Raman spectroscopy
    Phys. Stat. Sol. (b) 254, 1356 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Ley, Lothar;
    Graphene layers on silicon carbide studied by Raman spectroscopy
    Mat. Sci. Forum 600-603, 567 (2008).
  • Ristein, Jürgen; Yhang, W.; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: I. Charges, potentials, energies
    Phys. Rev. E 78, 041602 (2008).
  • Zhang, Wenying; Ristein, Jürgen; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: II. Redox activity
    Phys. Rev. E 78, 041603 (2008).
  • Mareš, J.J.; Hubík, P.; Krištofik, J.; Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Influence of ambient humidity on the surface conductivity of hydrogenated diamond
    Diam. Rel. Mat. 17, 1356 (2008).
  • Röhrl, J.; Hundhausen, Martin; Emtsev, K.V.; Seyller, Th.; Graupner, Ralf; Ley, Lothar;
    Raman spectra of epitaxial graphene on SiC(0001)
    Appl. Phys. Lett. 92, 201918 (2008).

2007

  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of cubic SiC single crystals by the physical vapor transport technique
    Journ. Cryst. Growth 308, 241 (2007).

2006

  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Pensl, Gerhard; Desperrier, P.; Wellmann, P.; Haller, E.; Ager, J.; Starke, Ulrich;
    Electronic Raman studies of shallow donors in Silicon Carbide
    Mat. Sci. Forum 527-529, 579 (2006).
  • Graupner, Ralf; Abraham, J.; Vencelov, A.; Lauffer, P.; Röhrl, J.; Hundhausen, Martin; Ley, Lothar; Hirsch, A.;
    Nucleophilic-Alkylation-Reoxidation: A Functionalization Sequence for Single- Wall Carbon Nanotubes
    J. Am. Chem. Soc. 128, 6683 (2006).
  • Strobel, Paul; Ristein, Jürgen; Ley, Lothar; Seppelt, K.; Goldt, I.V.; Boltalina, Olga;
    Surface conductivity induced by fullerenes on diamond: passivation and thermal stability
    Diam. Rel. Mat. 15, 720 (2006).
  • Ley, Lothar; Ristein, Jürgen; Maier, Frederic; Riedel, Marc; Strobel, Paul;
    Surface conductivity of diamond: a novel transfer doping mechanism
    Physica B 376-377, 262 (2006).
  • Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Surface conductivity of diamond: a novel doping mechanism
    Adv. in Science and Technol. 48, 93 (2006).

2005

  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar; Boltalina, Olga;
    Surface transfer doping of diamond by fullerene
    Diam. Rel. Mat. 14, 451 (2005).

2004

  • Ristein, Jürgen; Riedel, Marc; Ley, Lothar;
    Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
    Journal of the Electrochemical Society 151, E315 (2004).
  • Semmelroth, K.; Krieger, Michael; Pensl, Gerhard; Nagasawa, H.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Nerding, M.; Strunk, H.P.;
    Growth of 3C-SiC bulk material by the modified Lely method
    Mat. Sci. Forum 457-460, 151 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum
    Phys. Rev. B 69, 125338 (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Study of the temperature induced polytype conversion in cubic CVD SiC by Raman spectroscopy
    Mat. Sci. Forum 457-460, 617 (2004).
  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Surface transfer doping of diamond
    Nature 430, 439 (2004).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar; Semmelroth, K.; Schmid, F.; Pensl, Gerhard; Nagasawa, H.;
    Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy
    J. Appl. Phys. 96, 5569 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    The Impact of Ozone on the Surface Conductivity of Single Crystal Diamond
    Diam. Rel. Mat. 13, 746 (2004).

2003

  • Ristein, Jürgen; Riedel, Marc; Ley, Lothar; Takeuchi, Daisuke; Okushi, Hideyo;
    Band diagrams of intrinsic and p-tye diamond with hydrogenated surfaces
    phys. Stat. sol. (a) 199, 64 (2003).
  • Rezek, Bohuslav; Sauerer, C.; Nebel, C.E.; Stutzmann, M.; Ristein, Jürgen; Ley, Lothar; Snidero, E.; Bergonzo, P.;
    Fermi level on hydrogen terminated diamond surfaces
    Appl. Phys. Lett. 82, 2266 (2003).
  • Steeds, J.W.; Evans, G.A.; Furkert, S.; Ley, Lothar; Hundhausen, Martin; Schulze, N; Pensl, Gerhard;
    Identification of dumb-bell shaped interstitials in electron irradiated 6H-SiC by photoluminescence spectroscopy
    Mat. Sci. Forum 433-436, 305 (2003).
  • Wellmann, P.J.; Herro, Z; Selder, M.; Durst; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Winnacker, Albrecht;
    Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling
    Mat. Sci. Forum 433-436, 9 (2003).
  • Herro, Z.; Wellmann, P.J.; Püsche, R.; Hundhausen, Martin; Ley, Lothar; Maier, M.; Masri, P.; Winnacker, Albrecht;
    Investigation of mass transport during PVT growth of SiC by 13C labelling of source material
    Journ. Cryst. Growth 258, 261 (2003).
  • Püsche, R.; Hundhausen, Martin; Ley, Lothar;
    Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
    Mat. Sci. Forum 433-436, 325 (2003).
  • Takeuchi, Daisuke; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Surface band bending and surface conductivity of hydrogenated diamond
    Phys. Rev. B 68, 41304(R) (2003).

2002

  • Ley, Lothar; Ristein, Jürgen;
    Comment on "Effect of average grain size on the work function of diamond films
    Appl. Phys. Lett. 81, 183 (2002).
  • B. Herzog; S. Rohmfeld; Püsche, Roland; Hundhausen, Martin; Ley, Lothar; Semmelroth, Kurt; Pensl, Gerhard;
    Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
    Material Science Forum 389-393, 625 (2002).
  • Walter, Sebastian; Bernhardt, Jens; Starke, Ulrich; Heinz, Klaus; Ristein, Jürgen; Ley, Lothar;
    Geometry of the (2x1) reconstruction of diamond (111)
    J. Phys.: Condensed Matter 14, 3085 (2002).
  • Stammler, Martin; Eisenbeiß, H.; Ristein, Jürgen; Neubauer, Jürgen; Göbbels, Matthias; Ley, Lothar;
    Growth of high-quality homoepitaxial diamond films by HF-CVD
    Diam. Rel. Mat. 11, 504 (2002).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; C. A. Zorman; M. Mehregany;
    Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy
    Journal of Applied Physics 91, 1113 (2002).
  • Ristein, Jürgen; Riedel, Marc; Stammler, Martin; Mantel, Berthold F.; Ley, Lothar;
    Surface conductivity of nitrogen-doped diamond
    Diam. Rel. Mat. 11, 359 (2002).
  • N. Sieber; Stark, Tanja; Seyller, Thomas; Ley, Lothar; C.A. Zorman; M. Mehregany;
    The origin of the split Si-H stretch mode on hydrogenated 6H-SiC(0001): Titration of crystal truncation
    Applied Physics Letters 80, 4726 (2002).

2001

  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Stammler, Markus; Ley, Lothar;
    Diamond surface conductivity experiments and photoelectron spectroscopy
    Diam. Rel. Mat. 10, 416 (2001).
  • Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
    Physical Review B 64, 165411 (2001).
  • N. Sieber; B. Mantel; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar; T. Heller; D. R. Batchelor; D. Schmeisser;
    Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
    Applied Physics Letters 78, 1216 (2001).
  • Sieber, N.; Mantel, Berthold, F.; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar;
    Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air
    Diam. Rel. Mat. 10, 1291 (2001).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar; N. Schulze; Pensl, Gerhard;
    Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC
    Physical Review Letters 86, 826 (2001).
  • N. Sieber; Seyller, Thomas; Graupner, Ralf; Ley, Lothar; R. Mikalo; P. Hoffmann; D. R. Batchelor; D. Schmeisser;
    PES and LEED Study of Hydrogen and Oxygen terminated 6H-SiC(0001) and (000-1) Surfaces
    Applied Surface Science 184, 280 (2001).
  • Sieber, N.; Seyller, Thomas; Mantel, Berthold F.; Ristein, Jürgen; Ley, Lothar;
    Preparation and characterization of hydrogen terminated 6H-SiC
    Mat. Sci. Forum 353-356, 223 (2001).
  • Maier, Frederic; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Spectroscopic Investigations of Diamond/Hydrogen/Metal and Diamond/Metal Interfaces
    Diam. Rel. Mat. 10, 506 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface Conductivity of Diamond as a Function of Nitrogen Doping
    phys. Stat. sol. (a) 186, 249 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface doping: a special feature of diamond
    J Phys.: Condens. Matter 13, 8979 (2001).
  • Mantel, Berthold; Stammler, Markus; Ristein, Jürgen; Ley, Lothar;
    The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
    Diamond and Related Materials 10, 429 (2001).
  • Stark, Tanja; L. Gutowski; M. Herden; H. Grunleitner; S. Kohler; Hundhausen, Martin; Ley, Lothar;
    Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry
    Microelectronic Engineering 55, 101 (2001).

2000

  • Ley, Lothar; Ristein, Jürgen; Graupner, Ralf;
    Comment on ‘quantum confinement effect in diamond nanocrystals studied by x-ray-absorption spectroscopy’
    Phys. Rev. Lett. 84, 5679 (2000).
  • Stark, Tanja; H. Grünleitner; Hundhausen, Martin; Ley, Lothar;
    Deriving the Kinetic Parameters for Pt-Silicide Formation from Temperature Ramped in Situ Ellipsometric Measurements
    Thin Solid Films 358, 73 (2000).
  • Püsche, Roland; S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC
    Material Science Forum 338-342, 583 (2000).
  • Cui, Jingbiao; Ristein, Jürgen; Stammler, Martin; Janischowsky, Klemens; Kleber, G.; Ley, Lothar;
    Hydrogen termination and electron emission from CVD diamond surfaces: a combined SEM, PEEM, photoelectron yield, and field emission study
    Diam. Rel. Mat. 9, 1143 (2000).
  • Sieber, Norbert; Hollering, Markus; Ristein, Jürgen; Ley, Lothar; J. Riley; R. Leckey;
    Photoemission study of the silicate adlayer reconstruction on 6H-SiC(0001)
    Material Science Forum 338-342, 391 (2000).
  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Cui, Jingbiao; Ley, Lothar;
    Surface electronic properties of diamond
    Phys. Stat. Sol. 181, 65 (2000).
  • Maier, Florian; Riedel, Marc; Mantel, B. ; Ristein, Jürgen; Ley, Lothar;
    The origin of surface conductivity in diamond
    Physical Review Letters 85, 3472 (2000).
  • Cui, Jingbiao; Stammler, Martin; Ristein, Jürgen; Ley, Lothar;
    The role of hydrogen for field emission from chemical vapour deposited diamond and nanocrystaline diamond powder
    J. Appl. Phys. 88, 3667 (2000).
  • Ristein, Jürgen; Cui, Jingbiao; Graupner, Ralf; Maier, Frederic; Riedel, Marc; Mantel, Berthold F.; Stammler, Markus; Ley, Lothar;
    The role of adsorbates and defects on diamond surfaces
    New Diamond and Frontier Carbon Technology 10, 363 (2000).

1999

  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure
    Phys. Rev. B 59, 5847 (1999).
  • Hollering, Markus; Maier, Florian; Sieber, Norbert; Stammler, Markus; Ristein, Jürgen; Ley, Lothar; A. Stampfl; J. Riley; R. Leckey;
    Electronic states of an ordered oxide on C-terminated 6H-SiC
    Surface Science 442, 531 (1999).
  • Cui, Jingbiao; Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Electron affinity and band bending of the single crystal diamond (111) surface
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Graupner, Ralf; Cui, Jingbiao; Ristein, Jürgen;
    Electronic properties of single crystalline diamond surfaces
    Carbon 37, 793 (1999).
  • Stammler, Martin; Ristein, Jürgen; Habermann, T.; Janischowsky, Klemens; Nau, D.; Müller, Gerhard; Ley, Lothar;
    Field emission measurements with micrometre resolution on carbon nanostructures
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Mantel, Berthold, F.; Matura, K.; Stammler, Markus; Janischowsky, Klemens; Ristein, Jürgen;
    Infrared spectroscopy of C-D vibrational modes on diamond (100) surfaces
    Surf. Sci. 427-428, 245 (1999).
  • Zhou, Shi-Ming; Hundhausen, Martin; Stark, Tanja; Chen, L.Y.; Ley, Lothar;
    Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry
    J. Vac. Sci. Technol. A 17, 144 (1999).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Low threshold electron emission from diamond
    Rev. B 60, 16135 (1999).
  • Ley, Lothar; Stark, Tanja; Hundhausen, Martin; Gruenleitner, Holger;
    Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors
    Symposium. Materials Research Society , 145 San Francisco, (1999).
  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar; Jung, Ch.;
    Surface sensitive K-edge absorption spectroscopy of clean and hydrogen terminated diamond (111) and (100) surfaces
    Phys. Rev. B 60, 17023 (1999).
  • Maier, Frederic; Graupner, Ralf; Hollering, Markus; Hammer, Lutz; Ristein, Jürgen; Ley, Lothar;
    The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study
    Surf. Sci. 443, 177 (1999).

1998

  • Ristein, Jürgen; Stief, R.T.; Beyer, Wolfgang Fritz; Ley, Lothar;
    A comparative analysis of a C:H by IR-spectroscopy and mass selected thermal effusion
    J. Appl. Phys. 84, 3836 (1998).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy
    Appl. Surf. Sci. 123/124, 11 (1998).
  • Graupner, Ralf; Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    High resolution surface sensitive C1s core level spectra of clean and hydrogen terminated diamond (100) and (111) surfaces
    Phys. Rev. B 57, 12397 (1998).
  • Sieber, N.; Ristein, Jürgen; Ley, Lothar;
    Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures
    Mat. Sci. Forum 264-268, 825 (1998).
  • Cui, Jingbiao; Amtmann, K.; Ristein, Jürgen; Ley, Lothar;
    Non contact temperature measurements of diamond by Raman spectroscopy
    J. Appl. Phys. 83, 7929 (1998).
  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: a contactless unipolar transport experiment
    Diam. and Rel. Mat. 7, 626 (1998).
  • S. Rohmfeld; Hundhausen, Martin; Ley, Lothar;
    Raman scttering in polycrystalline 3C-SiC: influence of stacking faults
    Physical Review B 58, 9858 (1998).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    The electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
    Phys. Rev. Lett. 81, 429 (1998).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Valence band and gap state spectroscopy of amorphous carbon by photoelectron emission techniques
    Amorphous Carbon:State of the Art , 163-185 Singapore Singapore, (1998).

1997

  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy
    Phys. Rev. Lett. 78, 1803 (1997).
  • Graupner, Ralf; Hollering, Markus; Ziegler, Anja; Ristein, Jürgen; Ley, Lothar; Stampfl, A.;
    Dispersion of surface states on diamond (100) and (111)
    Phys. Rev. B 55, 10841 (1997).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the interface between c-Si (111) and diamond like carbon
    Diam. and Rel. Mat. 6, 730 (1997).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H
    Appl. Surf. Sci. 117/118, 32 (1997).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Interface formation between hydrogen terminated Si (111) and amorphous hydrogenated carbon (a-C:H)
    J. Vac. Sci. & Technol. A 15, 408 (1997).
  • Miyazaki, Seiichi; Nishimura, H.; Fukuda, M; Ley, Lothar; Ristein, Jürgen;
    Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
    Appl. Surf. Sci. 117/118, 32 (1997).

1996

  • Leihkamm, K.; Wolf, Markus; Ristein, Jürgen; Ley, Lothar;
    Changes of the occupied density of defect states of a-Si:H upon illumination
    Phys. Rev. B 53, 4522 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. and Rel. Mat. 5, 321 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
    J. Appl. Phys. 76, 768 (1996).
  • Hundhausen, Martin; Nagy, A.; Ley, Lothar;
    High field transport in the inversion layer of amorphous silicon thin film transistors
    J. Non-Cryst. Sol. 198-200, 230 (1996).
  • Stief, R.; Schäfer, J.; Ristein, Jürgen; Ley, Lothar; Beyer, Wolfgang Fritz;
    Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments
    J. Non-Cryst. Sol. 198-200, 643 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Influence of space charges on the resonant photoconductor employing a moving laser inducde grating
    Appl. Phys. Lett. 69, 1746 (1996).
  • Ley, Lothar; Teuschler, Ralf; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin;
    Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope
    J. Vac. Sci. Technol. B 14, 2845 (1996).
  • Teuschler, Thomas; Mahr, K.; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope
    J. Vac. Sci. Technol. B 14, 1268 (1996).
  • Ley, Lothar; Ristein, Jürgen; Schäfer, J.; Miyazaki, Seiichi;
    New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces
    J. Vac. Sci. & Technol. B 14, 3008 (1996).
  • Schäfer, J; Ristein, Jürgen; Graupner, Ralf; Ley, Lothar; Stephan, U.; Frauenheim, Thomas; Veerasamy, V.S.; Amaratunga, Gehan A. J.; Weiler, M.; Erhardt, H.;
    Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
    Phys. Rev. B 53, 7762 (1996).
  • Hundhausen, Martin; Ley, Lothar; Witt, C.;
    Resonant photoconductor structures for the generation of microwave currents: Importance of space charges
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3319 Berlin Berlin, (1996).
  • Strauß, Johannes; Hundhausen, Martin; Ley, Lothar;
    Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection
    proc. 23rd Int. Conf. on the Physics of Semiconductors , 3223 Berlin Berlin, (1996).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Surface Fermi level position of hydrogen passivated Si (111) surfaces
    Appl. Phys. Lett. 68, 1247 (1996).
  • Graupner, Ralf; Ristein, Jürgen; Ziegler, Anja; Hollering, Markus; Ley, Lothar;
    Surface state dispersions on diamond (100) and (111) surfaces
    the Physics of Semiconductors 2, 843 Singapore (1996).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Stephan, U.; Frauenheim, Thomas;
    The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation
    J. Non-Cryst. Sol. 198-200, 641 (1996).

1995

  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors
    Phys. Rev. B 51, 10579 (1995).
  • Hundhausen, Martin; Ley, Lothar;
    Bipolar treatment of the electrically detected transient grating technique
    Appl. Phys. Lett. 67, 2518 (1995).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. Rel. Mat. 5, 321 (1995).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Effektive correlation energies for defects in a-C:H from a comparison of photoelectron yield and electron spin resonance experiments
    Diamond and Related Materials 4, 508 (1995).
  • Weigelt, G.; Hundhausen, Martin; Ley, Lothar;
    Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e
    Solid State Phenomena 44-46, 495 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscopy
    Appl. Phys. Lett. 66, 2499 (1995).
  • Teuschler, Thomas; Mahrt-Hülbig, Karin; Miyazaki, Seiichi; Hundhausen, Martin; Ley, Lothar;
    Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics
    Appl. Phys. Lett. 67, 3144 (1995).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin
    Phys. Rev. B 52, 11289 (1995).
  • Ristein, Jürgen; Appelt, C; Gertkemper, T.; Ley, Lothar;
    The influence of chemical annealing on the electronic properties of amorphous silicon
    Solid State Phenomena 44-46, 775-790 Switzerland (1995).

1994

  • Teuschler, Thomas; Hundhausen, Martin; Eckstein, Ralf; Ley, Lothar;
    Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air
    J. Vac. Sci. Technol. B 12, 2440 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices
    Superlattices and Microstructures 16, 271 (1994).
  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar;
    Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures
    J. Appl. Phys. 75, 2690 (1994).
  • Hundhausen, Martin; Haken, U.; Ley, Lothar;
    Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors
    Mat. Res. Soc. Symp. Proc. 336, 353 (1994).
  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Photoelectron spectroscopy of clean and hydrogen exposed diamond (111) surfaces
    Surface Science 320, 201 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diamond and Related Materials 3, 891 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diam. Rel. Mat. 3, 891 (1994).

1993

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Arce, R.;
    Analysis of Random telegraph noise in large-area amorphous double-barrier structures
    Phys. Rev. B 47, 12687 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique
    J. of Non Cryst. Solids 164-166, 497 (1993).
  • Plass, M.F.; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the a-Si:H/a-SiNx:H interface
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy
    J. Non-Cryst. Solids 164-166, 1123 (1993).
  • Nagy, A.; Hundhausen, Martin; Ley, Lothar; Brunst, G.; Holzenkämpfer, E.;
    Field enhanced conductivity in a-Si:H thin film transistors
    J. Non-Cryst. Solids 164-166, 529 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Ibach, Harald;
    High Sensitivity photoelectron yield spectroscopy with computer-calculated electron optics
    Rev. Sci. Instrum. 64, 653 (1993).
  • Xu, S.; Hundhausen, Martin; Ristein, Jürgen; Yan. B.; Ley, Lothar;
    Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
    J. Non-Cryst. Solids 164-166, 1127 (1993).
  • Stöckel, R.; Graupner, Ralf; Janischowsky, Klemens; Xu, S.; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Initial stages in the growth of polycrystalline diamond on silicon
    Diamonds and Related Materials 2, 1467 (1993).
  • Gertkemper, Th.; Ristein, Jürgen; Ley, Lothar;
    In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy
    J. Non-Cryst. Solids 164-166, 123 (1993).
  • Graf, Walther; Wolf, Markus; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Light-induced transient changes of the occupied density of defect states of a-Si:H
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Haken, U.; Hundhausen, Martin; Ley, Lothar;
    Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime
    Appl. Phys. Lett. 63, 3066 (1993).
  • Graf, Walther; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Signature of the weak bond-dangling bond conversion process in a-Si:H as seen by total photoelectron yield spectroscopy
    MRS Proceedings 297, 207 Pitsburg, (1993).

1991

  • Teuschler, Thomas; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Individual electronic defect states in a-Si:H/a-SiNx double barrier structures
    J. of Non Cryst. Solids 137&138, 1107 (1991).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar; Viczian, C.;
    Structure of interfaces in a-Si:H/a-SiNx:H superlattices
    J. Appl. Phys. 69, 778 (1991).
  • Hundhausen, Martin; Ley, Lothar;
    The formation and stability of sub-micron clusters in silane and argon plasmas
    J. of Non Cryst. Solids 137&138, 795 (1991).

1989

  • Arce, R.; Ley, Lothar; Hundhausen, Martin;
    Random telegraphic noise in large area a-Si:H/a:Si1􀀀xNx double barrier structures
    J. of Non Cryst. Solids 114, 471 (1989).

1987

  • Ley, Lothar; Hundhausen, Martin;
    Carrier recombination kinetics in amorphous doping superlattices
    Disordered semiconductors , n/a New York & London (1987).

1986

1985

  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Experimental evidence for Phonon folding in compositional amorphous Superlattices
    J. of Non Cryst. Solids 77&78, 1069 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices
    Phys. Rev. B 32, 6655 (1985).
  • Santos, P.; Hundhausen, Martin; Ley, Lothar;
    Observation of folded-zone acoustical phonons by Raman scattering
    Phys. Rev. B 33, 1516 (1985).
  • Hundhausen, Martin; Ley, Lothar;
    Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices
    J. of Non Cryst. Solids 77&78, 1051 (1985).

1984

  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination in Doping-Superlattices of a-Si:H
    Proc. 17th Int. Conf. on the Physics of Semiconductors , 495 San Francisco San Francisco, (1984).
  • Hundhausen, Martin; Ley, Lothar; Carius, R.;
    Carrier Recombination Times in Amorphous-Silicon Doping Superlattices
    Phys. Rev. Lett. 53, 1598 (1984).