apl. Prof. Dr. Jürgen Ristein

Lehrstuhl für Laserphysik (Prof. Dr. Hommelhoff)

Publications

2013

  • Bashouti, Muhammad Y.; Ristein, Jürgen; Haick, Hossam; Christiansen, Silke H.;
    A Non-Oxidative Approach Towards Hybrid Silicon Nanowire- Based Solar Cell Heterojunctions
    Hybrid Materials 1, 2 (2013).
  • Ley, Lothar; Smets, Yaou; Pakes, Christopher I.; Ristein, Jürgen;
    Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides
    Advanced Functional Materials 23, 794 (2013).
  • Rietwyk, K.J.; Smets, Yaou; Bashouti, Muhammad Y.; Christiansen, Silke H.; Tadich, A.; Edmonds, M.T.; Ristein, Jürgen; Ley, Lothar; Pakes, Chritopher I.;
    Charge transfer doping of Silicon
    Phys. Rev. Lett. n/a, n/a (2013).
  • O'Donnel, K.M.; Edmonds, M.T.; Ristein, Jürgen; Tadich, A.; Thomsen, L.; Wu, Qihui; Pakes, Christopher I.; Ley, Lothar;
    Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement
    Adv. Funct. Mat. 23, 5608-5614 (2013).
  • Bashouti, Muhammad Y.; Pietsch, Matthias; Brönstrup, Gerald; Sivakov, Vladimir; Ristein, Jürgen; Chritiansen, Silke H.;
    Heterojunction based hybrid silicon nanowire solar cell: surface termination, photoelectron and photoemission spectroscopy study
    Prog. Photovolt: Res. Appl. , n/a (2013).
  • Bashouti, Muhammad Y.; Sardashti, Kasra; Ristein, Jürgen; Christiansen, Silke H.;
    Kinetic study of H-terminated silicon nanowires oxidation in very first stages
    Nanoscale Research Letters 8, 41 (2013).
  • Bashouti, Muhammad Y.; Sardashti, Kasra; Schmitt, Sebastian W.; Pietsch, Matthisa; Ristein, Jürgen; Haick, Hossam; Chritiansen, Silke H.;
    Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology
    Progress in Surface Science 88, 39 (2013).

2012

  • Ley, Lothar; Ristein, Jürgen;
    Diamond Surfaces
    Surface and Interface Science 2, 889-940 Weinheim, Germany (2012).
  • Bashouti, Muhammad Y.; Sardashti, Kasra; Ristein, Jürgen; Christiansen, Silke H.;
    Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy
    Phys. Chem and Chem Phys. 14, 11877 (2012).
  • Ristein, Jürgen; Mammadov, S.; Seyller, Thomas;
    Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
    Phys. Rev. Lett. 108, 246104 (2012).

2011

  • Edmonds, M.T.; Pakes, Christopher I.; Mammadov, S.; Zhang, Wenying; Tadich, A.; Ristein, Jürgen; Ley, Lothar;
    Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
    Appl. Phys. Lett. 88, 102101 (2011).

2010

  • Ristein, Jürgen; Yhang, Wenying; Speck, Florian; Ostler, Markus; Ley, Lothar; Seyller, Thomas;
    Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
    J. Phys. D: App. Phys. 43, 345303 (2010).
  • Strobel, Paul; Ristein, Jürgen; Ley, Lothar;
    Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films
    J. Phys. Chem. C 114, 4317 (2010).

2008

  • Lazea, A.; Mortet, V.; D’Heaen, J.; Geithner, P.; Ristein, Jürgen; D’Olieslaeger, M.; Haenen, K.;
    Growth of polycrystalline phosphourous-doped CVD diamond layers
    Chem. Phys. Lett. 454, 310 (2008).
  • Ristein, Jürgen; Yhang, W.; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: I. Charges, potentials, energies
    Phys. Rev. E 78, 041602 (2008).
  • Zhang, Wenying; Ristein, Jürgen; Ley, Lothar;
    Hydrogen-terminated diamond electrodes: II. Redox activity
    Phys. Rev. E 78, 041603 (2008).
  • Mareš, J.J.; Hubík, P.; Krištofik, J.; Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Influence of ambient humidity on the surface conductivity of hydrogenated diamond
    Diam. Rel. Mat. 17, 1356 (2008).

2006

  • Ristein, Jürgen;
    Diamond surfaces: familiar and amazing
    Appl. Phys. A 82, 337 (2006).
  • Ristein, Jürgen;
    Surface transfer doping of diamond
    J. Phys. D: Appl. Phys. 39, R71 (2006).
  • Ristein, Jürgen;
    Surface science of diamond: familiar and amazing
    Surf. Science 600, 3677 (2006).
  • Ristein, Jürgen;
    Surface transfer doping of semiconductors
    Science 313, 1057 (2006).
  • Strobel, Paul; Ristein, Jürgen; Ley, Lothar; Seppelt, K.; Goldt, I.V.; Boltalina, Olga;
    Surface conductivity induced by fullerenes on diamond: passivation and thermal stability
    Diam. Rel. Mat. 15, 720 (2006).
  • Ley, Lothar; Ristein, Jürgen; Maier, Frederic; Riedel, Marc; Strobel, Paul;
    Surface conductivity of diamond: a novel transfer doping mechanism
    Physica B 376-377, 262 (2006).
  • Ristein, Jürgen; Strobel, Paul; Ley, Lothar;
    Surface conductivity of diamond: a novel doping mechanism
    Adv. in Science and Technol. 48, 93 (2006).

2005

  • Larsson, K.; Ristein, Jürgen;
    Diamond surface conductivity under atmospheric conditions; theoretical approach
    J. Phys. Chem. 109, 10304 (2005).
  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar; Boltalina, Olga;
    Surface transfer doping of diamond by fullerene
    Diam. Rel. Mat. 14, 451 (2005).
  • Ristein, Jürgen;
    The physics of hydrogen-terminated diamond surfaces
    AIP Conf. Proc. 772, 377 (2005).

2004

  • Ristein, Jürgen;
    Charge carrier diffusion profiles in wide band gap semiconductors
    Diam. Rel. Mat. 13, 808 (2004).
  • Ristein, Jürgen; Riedel, Marc; Ley, Lothar;
    Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
    Journal of the Electrochemical Society 151, E315 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum
    Phys. Rev. B 69, 125338 (2004).
  • Ristein, Jürgen;
    Structural and electronic properties of diamond surfaces
    Thin Film Diamond (part II) , 37-96 Amsterdam (2004).
  • Strobel, Paul; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Surface transfer doping of diamond
    Nature 430, 439 (2004).
  • Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    The Impact of Ozone on the Surface Conductivity of Single Crystal Diamond
    Diam. Rel. Mat. 13, 746 (2004).

2003

  • Ristein, Jürgen; Riedel, Marc; Ley, Lothar; Takeuchi, Daisuke; Okushi, Hideyo;
    Band diagrams of intrinsic and p-tye diamond with hydrogenated surfaces
    phys. Stat. sol. (a) 199, 64 (2003).
  • Rezek, Bohuslav; Sauerer, C.; Nebel, C.E.; Stutzmann, M.; Ristein, Jürgen; Ley, Lothar; Snidero, E.; Bergonzo, P.;
    Fermi level on hydrogen terminated diamond surfaces
    Appl. Phys. Lett. 82, 2266 (2003).
  • Takeuchi, Daisuke; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Surface band bending and surface conductivity of hydrogenated diamond
    Phys. Rev. B 68, 41304(R) (2003).

2002

2001

  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Stammler, Markus; Ley, Lothar;
    Diamond surface conductivity experiments and photoelectron spectroscopy
    Diam. Rel. Mat. 10, 416 (2001).
  • Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
    Physical Review B 64, 165411 (2001).
  • N. Sieber; B. Mantel; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar; T. Heller; D. R. Batchelor; D. Schmeisser;
    Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
    Applied Physics Letters 78, 1216 (2001).
  • Ristein, Jürgen;
    Electron affinities of diamond surfaces
    Growth, Properties and Application of Diamond , 73 London (2001).
  • Sieber, N.; Mantel, Berthold, F.; Seyller, Thomas; Ristein, Jürgen; Ley, Lothar;
    Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air
    Diam. Rel. Mat. 10, 1291 (2001).
  • Sieber, N.; Seyller, Thomas; Mantel, Berthold F.; Ristein, Jürgen; Ley, Lothar;
    Preparation and characterization of hydrogen terminated 6H-SiC
    Mat. Sci. Forum 353-356, 223 (2001).
  • Maier, Frederic; Riedel, Marc; Ristein, Jürgen; Ley, Lothar;
    Spectroscopic Investigations of Diamond/Hydrogen/Metal and Diamond/Metal Interfaces
    Diam. Rel. Mat. 10, 506 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface Conductivity of Diamond as a Function of Nitrogen Doping
    phys. Stat. sol. (a) 186, 249 (2001).
  • Ristein, Jürgen; Riedel, Marc; Maier, Frederic; Mantel, Berthold F.; Stammler, Martin; Ley, Lothar;
    Surface doping: a special feature of diamond
    J Phys.: Condens. Matter 13, 8979 (2001).
  • Mantel, Berthold; Stammler, Markus; Ristein, Jürgen; Ley, Lothar;
    The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
    Diamond and Related Materials 10, 429 (2001).

2000

  • Ley, Lothar; Ristein, Jürgen; Graupner, Ralf;
    Comment on ‘quantum confinement effect in diamond nanocrystals studied by x-ray-absorption spectroscopy’
    Phys. Rev. Lett. 84, 5679 (2000).
  • Ristein, Jürgen;
    Electronic properties of diamond surfaces - blessing or curse for devices?
    Diamond and Related Materials 9, 1129 (2000).
  • Cui, Jingbiao; Ristein, Jürgen; Stammler, Martin; Janischowsky, Klemens; Kleber, G.; Ley, Lothar;
    Hydrogen termination and electron emission from CVD diamond surfaces: a combined SEM, PEEM, photoelectron yield, and field emission study
    Diam. Rel. Mat. 9, 1143 (2000).
  • Sieber, Norbert; Hollering, Markus; Ristein, Jürgen; Ley, Lothar; J. Riley; R. Leckey;
    Photoemission study of the silicate adlayer reconstruction on 6H-SiC(0001)
    Material Science Forum 338-342, 391 (2000).
  • Ristein, Jürgen; Maier, Florian; Riedel, Marc; Cui, Jingbiao; Ley, Lothar;
    Surface electronic properties of diamond
    Phys. Stat. Sol. 181, 65 (2000).
  • Maier, Florian; Riedel, Marc; Mantel, B. ; Ristein, Jürgen; Ley, Lothar;
    The origin of surface conductivity in diamond
    Physical Review Letters 85, 3472 (2000).
  • Cui, Jingbiao; Stammler, Martin; Ristein, Jürgen; Ley, Lothar;
    The role of hydrogen for field emission from chemical vapour deposited diamond and nanocrystaline diamond powder
    J. Appl. Phys. 88, 3667 (2000).
  • Ristein, Jürgen; Cui, Jingbiao; Graupner, Ralf; Maier, Frederic; Riedel, Marc; Mantel, Berthold F.; Stammler, Markus; Ley, Lothar;
    The role of adsorbates and defects on diamond surfaces
    New Diamond and Frontier Carbon Technology 10, 363 (2000).

1999

  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure
    Phys. Rev. B 59, 5847 (1999).
  • Hollering, Markus; Maier, Florian; Sieber, Norbert; Stammler, Markus; Ristein, Jürgen; Ley, Lothar; A. Stampfl; J. Riley; R. Leckey;
    Electronic states of an ordered oxide on C-terminated 6H-SiC
    Surface Science 442, 531 (1999).
  • Cui, Jingbiao; Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Electron affinity and band bending of the single crystal diamond (111) surface
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Graupner, Ralf; Cui, Jingbiao; Ristein, Jürgen;
    Electronic properties of single crystalline diamond surfaces
    Carbon 37, 793 (1999).
  • Stammler, Martin; Ristein, Jürgen; Habermann, T.; Janischowsky, Klemens; Nau, D.; Müller, Gerhard; Ley, Lothar;
    Field emission measurements with micrometre resolution on carbon nanostructures
    Diam. Rel. Mat. 8, 792 (1999).
  • Ley, Lothar; Mantel, Berthold, F.; Matura, K.; Stammler, Markus; Janischowsky, Klemens; Ristein, Jürgen;
    Infrared spectroscopy of C-D vibrational modes on diamond (100) surfaces
    Surf. Sci. 427-428, 245 (1999).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    Low threshold electron emission from diamond
    Rev. B 60, 16135 (1999).
  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar; Jung, Ch.;
    Surface sensitive K-edge absorption spectroscopy of clean and hydrogen terminated diamond (111) and (100) surfaces
    Phys. Rev. B 60, 17023 (1999).
  • Maier, Frederic; Graupner, Ralf; Hollering, Markus; Hammer, Lutz; Ristein, Jürgen; Ley, Lothar;
    The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study
    Surf. Sci. 443, 177 (1999).

1998

  • Ristein, Jürgen; Stief, R.T.; Beyer, Wolfgang Fritz; Ley, Lothar;
    A comparative analysis of a C:H by IR-spectroscopy and mass selected thermal effusion
    J. Appl. Phys. 84, 3836 (1998).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy
    Appl. Surf. Sci. 123/124, 11 (1998).
  • Graupner, Ralf; Maier, Florian; Ristein, Jürgen; Ley, Lothar;
    High resolution surface sensitive C1s core level spectra of clean and hydrogen terminated diamond (100) and (111) surfaces
    Phys. Rev. B 57, 12397 (1998).
  • Sieber, N.; Ristein, Jürgen; Ley, Lothar;
    Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures
    Mat. Sci. Forum 264-268, 825 (1998).
  • Cui, Jingbiao; Amtmann, K.; Ristein, Jürgen; Ley, Lothar;
    Non contact temperature measurements of diamond by Raman spectroscopy
    J. Appl. Phys. 83, 7929 (1998).
  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: a contactless unipolar transport experiment
    Diam. and Rel. Mat. 7, 626 (1998).
  • Cui, Jingbiao; Ristein, Jürgen; Ley, Lothar;
    The electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
    Phys. Rev. Lett. 81, 429 (1998).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Valence band and gap state spectroscopy of amorphous carbon by photoelectron emission techniques
    Amorphous Carbon:State of the Art , 163-185 Singapore Singapore, (1998).

1997

  • Ristein, Jürgen; Stein, W.; Ley, Lothar;
    Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy
    Phys. Rev. Lett. 78, 1803 (1997).
  • Graupner, Ralf; Hollering, Markus; Ziegler, Anja; Ristein, Jürgen; Ley, Lothar; Stampfl, A.;
    Dispersion of surface states on diamond (100) and (111)
    Phys. Rev. B 55, 10841 (1997).
  • Ristein, Jürgen; Graupner, Ralf;
    Electronic properties of diamond surfaces
    Festkörperprobleme/Advances in Solid State Physics 36, 77 Braunschweig/Wiesbaden (1997).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the interface between c-Si (111) and diamond like carbon
    Diam. and Rel. Mat. 6, 730 (1997).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H
    Appl. Surf. Sci. 117/118, 32 (1997).
  • Schäfer, J; Ristein, Jürgen; Miyazaki, Seiichi; Ley, Lothar;
    Interface formation between hydrogen terminated Si (111) and amorphous hydrogenated carbon (a-C:H)
    J. Vac. Sci. & Technol. A 15, 408 (1997).
  • Miyazaki, Seiichi; Nishimura, H.; Fukuda, M; Ley, Lothar; Ristein, Jürgen;
    Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
    Appl. Surf. Sci. 117/118, 32 (1997).

1996

  • Leihkamm, K.; Wolf, Markus; Ristein, Jürgen; Ley, Lothar;
    Changes of the occupied density of defect states of a-Si:H upon illumination
    Phys. Rev. B 53, 4522 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. and Rel. Mat. 5, 321 (1996).
  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
    J. Appl. Phys. 76, 768 (1996).
  • Stief, R.; Schäfer, J.; Ristein, Jürgen; Ley, Lothar; Beyer, Wolfgang Fritz;
    Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments
    J. Non-Cryst. Sol. 198-200, 643 (1996).
  • Ley, Lothar; Ristein, Jürgen; Schäfer, J.; Miyazaki, Seiichi;
    New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces
    J. Vac. Sci. & Technol. B 14, 3008 (1996).
  • Schäfer, J; Ristein, Jürgen; Graupner, Ralf; Ley, Lothar; Stephan, U.; Frauenheim, Thomas; Veerasamy, V.S.; Amaratunga, Gehan A. J.; Weiler, M.; Erhardt, H.;
    Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
    Phys. Rev. B 53, 7762 (1996).
  • Miyazaki, Seiichi; Schäfer, J.; Ristein, Jürgen; Ley, Lothar;
    Surface Fermi level position of hydrogen passivated Si (111) surfaces
    Appl. Phys. Lett. 68, 1247 (1996).
  • Graupner, Ralf; Ristein, Jürgen; Ziegler, Anja; Hollering, Markus; Ley, Lothar;
    Surface state dispersions on diamond (100) and (111) surfaces
    the Physics of Semiconductors 2, 843 Singapore (1996).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Stephan, U.; Frauenheim, Thomas;
    The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation
    J. Non-Cryst. Sol. 198-200, 641 (1996).

1995

  • Stöckel, R.; Janischowsky, Klemens; Rohmfeld, Stefan; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Diamond growth during the bias pretreatment in microwave CVD of diamond
    Diam. Rel. Mat. 5, 321 (1995).
  • Ristein, Jürgen; Schäfer, J.; Ley, Lothar;
    Effektive correlation energies for defects in a-C:H from a comparison of photoelectron yield and electron spin resonance experiments
    Diamond and Related Materials 4, 508 (1995).
  • Ristein, Jürgen; Appelt, C; Gertkemper, T.; Ley, Lothar;
    The influence of chemical annealing on the electronic properties of amorphous silicon
    Solid State Phenomena 44-46, 775-790 Switzerland (1995).

1994

  • Graupner, Ralf; Ristein, Jürgen; Ley, Lothar;
    Photoelectron spectroscopy of clean and hydrogen exposed diamond (111) surfaces
    Surface Science 320, 201 (1994).
  • Ristein, Jürgen;
    Sum rule for quadrature response frequency resolved photoluminescence spectra
    Phil. Mag. B 70, 963 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diamond and Related Materials 3, 891 (1994).
  • Graupner, Ralf; Stöckel, R.; Janischowsky, Klemens; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    The influence of surface treatment on the electronic structure of CVD diamond films
    Diam. Rel. Mat. 3, 891 (1994).

1993

  • Plass, M.F.; Ristein, Jürgen; Ley, Lothar;
    Electronic and structural properties of the a-Si:H/a-SiNx:H interface
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar;
    Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy
    J. Non-Cryst. Solids 164-166, 1123 (1993).
  • Schäfer, J; Ristein, Jürgen; Ley, Lothar; Ibach, Harald;
    High Sensitivity photoelectron yield spectroscopy with computer-calculated electron optics
    Rev. Sci. Instrum. 64, 653 (1993).
  • Xu, S.; Hundhausen, Martin; Ristein, Jürgen; Yan. B.; Ley, Lothar;
    Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
    J. Non-Cryst. Solids 164-166, 1127 (1993).
  • Stöckel, R.; Graupner, Ralf; Janischowsky, Klemens; Xu, S.; Ristein, Jürgen; Hundhausen, Martin; Ley, Lothar;
    Initial stages in the growth of polycrystalline diamond on silicon
    Diamonds and Related Materials 2, 1467 (1993).
  • Gertkemper, Th.; Ristein, Jürgen; Ley, Lothar;
    In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy
    J. Non-Cryst. Solids 164-166, 123 (1993).
  • Graf, Walther; Wolf, Markus; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Light-induced transient changes of the occupied density of defect states of a-Si:H
    J. Non-Cryst. Solids 164-166, 195 (1993).
  • Graf, Walther; Leihkamm, K.; Ristein, Jürgen; Ley, Lothar;
    Signature of the weak bond-dangling bond conversion process in a-Si:H as seen by total photoelectron yield spectroscopy
    MRS Proceedings 297, 207 Pitsburg, (1993).

1991

  • Hautala, J.; Taylor, P.C.; Ristein, Jürgen;
    Interface states in a-Si:H as probed by optically induced ESR
    AIP Conference Proceedings 234, 170 Stafford, Denver, (1991).
  • Ristein, Jürgen;
    Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H
    J. Non-Cryst. Solids 137&138, 563 (1991).

1990

  • Ristein, Jürgen; Taylor, P.C.; Ohlsen, W.D.; Weiser, Gerhard;
    Radiative recombination center in As2Se3 as studied by optically detected magnetic resonance
    Phys. Rev. B 42, 11845 (1990).

1989

  • Ristein, Jürgen; Hautala, J.; Taylor, P.C.;
    Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance
    J. Non-Cryst. Solids 114, 444 (1989).
  • Ristein, Jürgen; Hooper, Brett; Gu, S.; Taylor, P.C.;
    Excitation spectroscopy of photoluminescence in a-Si:H
    Phys. Rev. B 27, 403 (1989).
  • Ristein, Jürgen; Hautala, J.; Taylor, P.C.;
    Excitation-energy dependence of optically induced ESRin a-Si:H
    Phys. Rev. B 40, 88 (1989).
  • Ristein, Jürgen; Taylor, P.C.; Ohlsen, W.D.; Weiser, Gerhard;
    Optically detected magnetic resonance of the intrinsic luminescence in As2Se3
    J. Non-Cryst. Solids 114, 91 (1989).

1988

  • Ristein, Jürgen; Weiser, Gerhard;
    Microscopic structure of the radiative centre in As2Se3 crystals
    Sol. State Commun. 66, 361 (1988).
  • Ristein, Jürgen; Finger, F.; Fuchs, W.; Liedtke, S.;
    Optically detected magnetic resonance (OMDR) in a-Si1-xGex:H-alloys
    Sol. State Commun. 67, 211 (1988).

1987

  • Weiser, Gerhard; Ristein, Jürgen;
    New insight into recombination and thermalization in As2Se3
    J. Non-Cryst. Solids 97&98, 1131 (1987).
  • Ristein, Jürgen; Weiser, Gerhard;
    Thermalization of excited carriers through band states studied by photoluminescence in As2Se3 single crystals
    Phil. Mag. B 56, 51 (1987).

1986

  • Ristein, Jürgen; Weiser, Gerhard;
    Quenching by electric fields of the luminescence of As2Se3 single crystals
    Sol. State Commun. 57, 639 (1986).
  • Ristein, Jürgen; Weiser, Gerhard;
    Recombination of geminate pairs in As2Se3 single crystals
    Phil. Mag. B 54, 533 (1986).

1985

  • Ristein, Jürgen; Weiser, Gerhard;
    Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon
    Solar Energy Materials 12, 221 (1985).